Resonant photoemission studies of the thickness dependence of the unoccupied Gd 5d bands

Finite temperature magnetism in Gd: evidence against a Stoner behavior.

The temperature dependence of the rare-earth valence bands has been regarded as a realization of the Stoner behavior. The exchange splitting of the electronic states appears to scale as the magnetic order parameter for T<T(C) and to vanish at T = T(C). We report here a spin-resolved photoemission study on the evolution of Gd bulk bands for 0.5< or =T/T(C)< or=1. The spin-polarized spectral line...

Gd-doping of HfO2

An increase in the density of states between the oxygen 2p bands and the Fermi level is seen with increasing Gd concentrations. In addition, for the Gd-doped HfO2 films, the Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum was identified using resonant photoemission. Electrical measurements show pronounced rectification properties for lightly-doped Gd:HfO2 films on p-Si and f...

Spin-polarized photoemission studies of the exchange splitting of the Gd 5d electrons near the Curie temperature.

Spin-split silicon states at step edges of Si(553)-Au

The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split sili...

MULTIPLET FINE STRUCTURE OF THE Gd AND Tb 5P LEVELS

Fine structure is observed in the photoemission of Gd and T b 5p levels as a result of multiplet splitting. These splittings are the consequence of different J final states that occur as a result of interactions with partly filled 4f and/or 5d levels.